Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum

Kazakov, A. S. and Galeeva, A. and Artamkin, A. and Ikonnikov, A. and Ryabova, L. and Dvoretsky, S. A. and Mikhailov, N. N. and Bannikov, M. and Danilov, S. N. and Khokhlov, D. R. (2021) Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum. SCIENTIFIC REPORTS, 11 (1): 11638. ISSN 2045-2322,

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Abstract

In this paper, we show that electron states formed in topological insulators at the interfaces topological phase-trivial phase and topological phase-vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg1-xCdxTe films, in which the PT-symmetric terahertz photoconductivity is observed. It is shown that the effect originates from features of the interface topological film-trivial buffer/cap layer. The PT-symmetric terahertz photoconductivity is not provided by electron states formed at the interface topological film-vacuum.

Item Type: Article
Uncontrolled Keywords: MOLECULAR-BEAM EPITAXY; TERAHERTZ PHOTOCONDUCTIVITY; CYCLOTRON-RESONANCE; PHOTON DRAG; QUANTUM; HG1-XCDXTE; TRANSITION; FILMS;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Depositing User: Dr. Gernot Deinzer
Date Deposited: 14 Sep 2022 12:07
Last Modified: 14 Sep 2022 12:07
URI: https://pred.uni-regensburg.de/id/eprint/47470

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