Roles of Elements of a Heterostructure Based on the Topological Phase of Hg1-xCdxTe in the Effect of PT-Symmetric Terahertz Photoconductivity

Kazakov, A. S. and Galeeva, A. and Ikonnikov, A. and Dolzhenko, D. E. and Ryabova, L. and Mikhailov, N. N. and Dvoretskiy, S. A. and Bannikov, M. and Danilov, S. N. and Khokhlov, D. R. (2021) Roles of Elements of a Heterostructure Based on the Topological Phase of Hg1-xCdxTe in the Effect of PT-Symmetric Terahertz Photoconductivity. JETP LETTERS, 113 (8). pp. 542-546. ISSN 0021-3640, 1090-6487

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Abstract

It is demonstrated that the PT-symmetric terahertz photoconductivity observed in heterostructures based on thick Hg1 -xCdxTe films in the topological phase is due to the photoexcitation of charge carriers in the film bulk. At the same time, the place of localization of the effect is the topological film-trivial buffer layer heterointerface. The model describing such a spatial separation of the source of nonequilibrium charge carriers and the effect localization is discussed.

Item Type: Article
Uncontrolled Keywords: PHOTON DRAG; INSULATOR; EXCITATION; RADIATION; FILMS;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Depositing User: Dr. Gernot Deinzer
Date Deposited: 16 Sep 2022 08:39
Last Modified: 16 Sep 2022 08:39
URI: https://pred.uni-regensburg.de/id/eprint/47530

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