Glazov, Mikhail M. and Chernikov, Alexey (2018) Breakdown of the Static Approximation for Free Carrier Screening of Excitons in Monolayer Semiconductors. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 255 (12): 1800216. ISSN 0370-1972, 1521-3951
Full text not available from this repository. (Request a copy)Abstract
The authors address the problem of free carrier screening of exciton states in two-dimensional monolayer semiconductors. Basic theoretical considerations are presented concerning the applicability of the commonly used static approximation of the screening effect and the implications are discussed. The authors show that the low-frequency models leads to a major overestimation of the free carrier response and are inadequate to describe the screening of strongly bound excitons in monolayer materials. The presented arguments are consistent with existing high-level many-body theories and transparently illustrate the underlying physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ELECTRONIC-PROPERTIES; TRIONS; excitons; free-carrier screening; transition-metal dichalcogenides; two-dimensional semiconductors |
| Subjects: | 500 Science > 530 Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 04 Oct 2019 09:01 |
| Last Modified: | 04 Oct 2019 09:01 |
| URI: | https://pred.uni-regensburg.de/id/eprint/13421 |
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