Tuning Methods for Semiconductor Spin Qubits

Botzem, Tim and Shulman, Michael D. and Foletti, Sandra and Harvey, Shannon P. and Dial, Oliver E. and Bethke, Patrick and Cerfontaine, Pascal and McNeil, Robert P. G. and Mahalu, Diana and Umansky, Vladimir and Ludwig, Arne and Wieck, Andreas and Schuh, Dieter and Bougeard, Dominique and Yacoby, Amir and Bluhm, Hendrik (2018) Tuning Methods for Semiconductor Spin Qubits. PHYSICAL REVIEW APPLIED, 10 (5): 054026. ISSN 2331-7019,

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Abstract

We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubits. Our methods are developed for double quantum dots in GaAs heterostructures, but they can easily be adapted to other quantum-dot-based qubit systems. These tuning procedures include the characterization of the interdot tunnel coupling, the tunnel coupling to the surrounding leads, and the identification of various fast initialization points for the operation of the qubit. Since semiconductor-based spin qubits are compatible with standard semiconductor process technology and hence promise good prospects of scalability, the challenge of efficiently tuning the dot's parameters will only grow in the near future, once the multiqubit stage is reached. With the anticipation of being used as the basis for future automated tuning protocols, all measurements presented here are fast-to-execute and easy-to-analyze characterization methods. They result in quantitative measures of the relevant qubit parameters within a couple of seconds and require almost no human interference.

Item Type: Article
Uncontrolled Keywords: QUANTUM; GATE;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Rupert Huber
Depositing User: Dr. Gernot Deinzer
Date Deposited: 10 Oct 2019 06:15
Last Modified: 10 Oct 2019 06:15
URI: https://pred.uni-regensburg.de/id/eprint/13545

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