High-Field Magnetoresistance of Organic Semiconductors

Joshi, G. and Teferi, M. Y. and Miller, R. and Jamali, S. and Groesbeck, M. and van Tol, J. and McLaughlin, R. and Vardeny, Z. V. and Lupton, J. M. and Malissa, H. and Boehme, C. (2018) High-Field Magnetoresistance of Organic Semiconductors. PHYSICAL REVIEW APPLIED, 10 (2): 024008. ISSN 2331-7019,

Full text not available from this repository. (Request a copy)

Abstract

The magnetoelectronic field effects in organic semiconductors at high magnetic fields are described by field-dependent mixing between singlet and triplet states of weakly bound charge-carrier pairs due to small differences in their Lande g factors that arise from the weak spin-orbit coupling in the material. In this work, we corroborate theoretical models for the high-field magnetoresistance of organic semiconductors, in particular of diodes made of the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) at low temperatures, by conducting magnetoresistance measurements along with multifrequency continuous-wave electrically detected magnetic-resonance experiments. The measurements are performed on identical devices under similar conditions in order to independently assess the magnetic-field-dependent spin-mixing mechanism, the so-called Delta g mechanism. An understanding of the microscopic origin of magnetoresistance in organic semiconductors is crucial for developing reliable magnetometer devices capable of operating over a broad range of magnetic fields of order 10(-7)-10 T.

Item Type: Article
Uncontrolled Keywords: CONJUGATED POLYMER; MAGNETIC-FIELD; SPIN; TEMPERATURE;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group John Lupton
Depositing User: Dr. Gernot Deinzer
Date Deposited: 10 Jan 2020 10:44
Last Modified: 10 Jan 2020 10:44
URI: https://pred.uni-regensburg.de/id/eprint/14054

Actions (login required)

View Item View Item