Vasileva, G. Yu. and Vasilyev, Yu. B. and Novikov, S. N. and Danilov, S. N. and Ganichev, S. D. (2018) On the Fabrication of Graphene p-n Junctions and Their Application for Detecting Terahertz Radiation. SEMICONDUCTORS, 52 (8). pp. 1077-1081. ISSN 1063-7826, 1090-6479
Full text not available from this repository. (Request a copy)Abstract
A new method for the formation of lateral p-n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p-n junctions. Such p-n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p-n junctions are discussed.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | EPITAXIAL GRAPHENE; IRRADIATION; SIO2; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 12 Feb 2020 10:02 |
| Last Modified: | 12 Feb 2020 10:02 |
| URI: | https://pred.uni-regensburg.de/id/eprint/14194 |
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