Operando Imaging of All-Electric Spin Texture Manipulation in Ferroelectric and Multiferroic Rashba Semiconductors

Krempasky, J. and Muff, S. and Minar, J. and Pilet, N. and Fanciulli, M. and Weber, A. P. and Guedes, E. B. and Caputo, M. and Mueller, E. and Volobuev, V. V. and Gmitra, M. and Vaz, C. A. F. and Scagnoli, V and Springholz, G. and Dil, J. H. (2018) Operando Imaging of All-Electric Spin Texture Manipulation in Ferroelectric and Multiferroic Rashba Semiconductors. PHYSICAL REVIEW X, 8 (2): 021067. ISSN 2160-3308,

Full text not available from this repository.

Abstract

The control of the electron spin by external means is a key issue for spintronic devices. Using spin- and angle-resolved photoemission spectroscopy (SARPES) with three-dimensional spin detection, we demonstrate operando electrostatic spin manipulation in ferroelectric alpha-GeTe and multiferroic Ge1-xMnxTe. We demonstrate for the first time electrostatic spin manipulation in Rashba semiconductors due to ferroelectric polarization reversal. Additionally, we are also able to follow the switching pathway in detail. In multiferroic Ge1-xMnxTe operando SARPES reveals switching of the perpendicular spin component due to electric-field-induced magnetization reversal. This provides firm evidence of magnetoelectric coupling which opens up functionality with a multitude of spin-switching paths in which the magnetic and electric order parameters are coupled through ferroelastic relaxation paths. This work thus provides a new type of magnetoelectric switching intertwined with Rashba-Zeeman splitting in a multiferroic system.

Item Type: Article
Uncontrolled Keywords: MECHANISMS;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Theroretical Physics
Depositing User: Dr. Gernot Deinzer
Date Deposited: 02 Mar 2020 14:56
Last Modified: 02 Mar 2020 14:56
URI: https://pred.uni-regensburg.de/id/eprint/14390

Actions (login required)

View Item View Item