Vasilyev, Yu. B. and Vasileva, G. Yu. and Novikov, S. and Tarasenko, S. A. and Danilov, S. N. and Ganichev, S. D. (2018) High-frequency rectification in graphene lateral p-n junctions. APPLIED PHYSICS LETTERS, 112 (4): 041111. ISSN 0003-6951, 1077-3118
Full text not available from this repository.Abstract
We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions. Published by AIP Publishing.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | PHOTODETECTORS; PHOTORESPONSE; IRRADIATION; FIELD; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 19 Mar 2020 12:24 |
| Last Modified: | 19 Mar 2020 12:24 |
| URI: | https://pred.uni-regensburg.de/id/eprint/15184 |
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