Shiogai, J. and Ciorga, M. and Utz, M. and Schuh, D. and Arakawa, T. and Kohda, M. and Kobayashi, K. and Ono, T. and Wegscheider, W. and Weiss, D. and Nitta, J. (2012) Dynamic nuclear spin polarization in an all-semiconductor spin injection device with (Ga,Mn)As/n-GaAs spin Esaki diode. APPLIED PHYSICS LETTERS, 101 (21): 212402. ISSN 0003-6951,
Full text not available from this repository.Abstract
We investigate the dynamic nuclear spin polarization in an n-GaAs lateral channel induced by electrical spin injection from a (Ga,Mn)As/n-GaAs spin Esaki diode. Signatures of nuclear spin polarization are studied in both three-terminal and non-local voltage signals, where a strong electron spin depolarization feature is observed close to zero magnetic field. This is due to the large nuclear field induced in the channel through hyperfine interaction between injected electron spins and localized nuclear spins. We study the time evolution of the dynamic nuclear spin polarization and evaluate polarization and relaxation times of nuclear spins in the channel. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767339]
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | GAAS; NMR; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 04 May 2020 07:00 |
| Last Modified: | 04 May 2020 07:00 |
| URI: | https://pred.uni-regensburg.de/id/eprint/17781 |
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