Plechinger, G. and Heydrich, S. and Eroms, J. and Weiss, D. and Schueller, C. and Korn, T. (2012) Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakes. APPLIED PHYSICS LETTERS, 101 (10): 101906. ISSN 0003-6951, 1077-3118
Full text not available from this repository. (Request a copy)Abstract
Single- and few-layer MoS2 has recently gained attention as an interesting material system for opto-electronics. Here, we report on scanning Raman measurements on few-layer MoS2 flakes prepared by exfoliation. We observe a Raman mode corresponding to a rigid shearing oscillation of adjacent layers. This mode appears at very low Raman shifts between 20 and 30 cm(-1). Its position strongly depends on the number of layers, which we independently determine using atomic force microscopy and investigation of the other characteristic Raman modes. Raman spectroscopy of the shear mode, therefore, is a useful tool to determine the number of layers for few-layer MoS2 flakes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751266]
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SINGLE; PHOTOLUMINESCENCE; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 06 May 2020 10:01 |
| Last Modified: | 06 May 2020 10:01 |
| URI: | https://pred.uni-regensburg.de/id/eprint/18129 |
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