Gate-controlled persistent spin helix state in (In,Ga)As quantum wells

Kohda, M. and Lechner, V. and Kunihashi, Y. and Dollinger, T. and Olbrich, P. and Schoenhuber, C. and Caspers, I. and Bel'kov, V. V. and Golub, L. E. and Weiss, D. and Richter, K. and Nitta, J. and Ganichev, S. D. (2012) Gate-controlled persistent spin helix state in (In,Ga)As quantum wells. PHYSICAL REVIEW B, 86 (8): 081306. ISSN 1098-0121,

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Abstract

In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state with suppressed spin relaxation is expected if the strengths of the Rashba and Dresselhaus SOI terms, alpha and beta, are equal. Here we demonstrate gate control and detection of the PSH in two-dimensional electron systems with strong SOI including terms cubic in momentum. We consider strain-free InGaAs/InAlAs quantum wells and first determine a ratio alpha/beta similar or equal to 1 for nongated structures by measuring the spin-galvanic and circular photogalvanic effects. Upon gate tuning the Rashba SOI strength in a complementary magnetotransport experiment, we monitor the complete crossover from weak antilocalization via weak localization to weak antilocalization, where the emergence of weak localization reflects a PSH-type state. A corresponding numerical analysis reveals that such a PSH-type state indeed prevails even in presence of strong cubic SOI, however no longer at alpha = beta.

Item Type: Article
Uncontrolled Keywords: WEAK-LOCALIZATION; ORBIT INTERACTION; HETEROSTRUCTURES; SPECTRUM;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Theroretical Physics
Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Klaus Richter
Physics > Institute of Experimental and Applied Physics
Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Depositing User: Dr. Gernot Deinzer
Date Deposited: 07 May 2020 05:33
Last Modified: 07 May 2020 05:33
URI: https://pred.uni-regensburg.de/id/eprint/18277

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