Betthausen, C. and Dollinger, T. and Saarikoski, H. and Kolkovsky, V. and Karczewski, G. and Wojtowicz, T. and Richter, K. and Weiss, D. (2012) Spin-Transistor Action via Tunable Landau-Zener Transitions. SCIENCE, 337 (6092). pp. 324-327. ISSN 0036-8075,
Full text not available from this repository. (Request a copy)Abstract
Spin-transistor designs relying on spin-orbit interaction suffer from low signal levels resulting from low spin-injection efficiency and fast spin decay. Here, we present an alternative approach in which spin information is protected by propagating this information adiabatically. We demonstrate the validity of our approach in a cadmium manganese telluride diluted magnetic semiconductor quantum well structure in which efficient spin transport is observed over device distances of 50 micrometers. The device is turned "off" by introducing diabatic Landau-Zener transitions that lead to a backscattering of spins, which are controlled by a combination of a helical and a homogeneous magnetic field. In contrast to other spin-transistor designs, we find that our concept is tolerant against disorder.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SEMICONDUCTORS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Theroretical Physics Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Klaus Richter Physics > Institute of Experimental and Applied Physics Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 11 May 2020 05:42 |
| Last Modified: | 11 May 2020 05:42 |
| URI: | https://pred.uni-regensburg.de/id/eprint/18433 |
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