Wild, A. and Kierig, J. and Sailer, J. and Ager, J. W. and Haller, E. E. and Abstreiter, G. and Ludwig, S. and Bougeard, D. (2012) Few electron double quantum dot in an isotopically purified Si-28 quantum well. APPLIED PHYSICS LETTERS, 100 (14): 143110. ISSN 0003-6951, 1077-3118
Full text not available from this repository. (Request a copy)Abstract
We present a few electron double quantum dot device defined in an isotopically purified Si-28 quantum well (QW). An electron mobility of 5.5 . 10(4)cm(2)(Vs)(-1) is observed in the QW, which is the highest mobility ever reported for a two-dimensional electron system in Si-28. The residual concentration of Si-29 nuclei in the Si-28 QW is lower than 10(3) ppm, at the verge where the hyperfine interaction is theoretically no longer expected to dominantly limit the T-2 spin dephasing time. We also demonstrate a complete suppression of hysteretic gate behavior and charge noise using a negatively biased global top gate. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3701588]
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SPIN; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 15 May 2020 05:02 |
| Last Modified: | 15 May 2020 05:02 |
| URI: | https://pred.uni-regensburg.de/id/eprint/18901 |
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