Gareev, Rashid and Stromberg, Frank and Buchmeier, Matthias and Keune, Werner and Back, Christian and Wende, Heiko (2012) Antiferromagnetic Coupling in Combined Fe/Si/MgO/Fe Structures with Controlled Interface Diffusion. APPLIED PHYSICS EXPRESS, 5 (3): 033003. ISSN 1882-0778,
Full text not available from this repository. (Request a copy)Abstract
We study antiferromagnetic coupling and interface diffusion in Fe/Si/MgO/Fe structures grown by molecular beam epitaxy. The Fe/Si/Fe samples with a 1.2-nm-thick Si spacer demonstrate antiferromagnetic coupling J(1) similar to-1.5 mJ/m(2) and prevailing interdiffusion at the top Si/Fe interface, as revealed by conversion electron Mossbauer spectroscopy. For combined Si/MgO spacers with 0.9-nm-thick Si, interdiffusion continuously reduces upon changing the MgO thickness from 0.3 to 0.5 nm accompanied by a decrease of antiferromagnetic coupling from vertical bar J(1)vertical bar similar to 1 mJ/m(2) to vertical bar J(1)vertical bar similar to 0.002 mJ/m(2). We emphasize that monolayer-scaled engineering of insulating spacers is a promising tool for the precise control of antiferromagnetic coupling and interface diffusion. (c) 2012 The Japan Society of Applied Physics
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ROOM-TEMPERATURE; MAGNETORESISTANCE; FIELD; SILICIDE; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Christian Back |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 19 May 2020 08:33 |
| Last Modified: | 19 May 2020 08:33 |
| URI: | https://pred.uni-regensburg.de/id/eprint/19139 |
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