Scholz, Ferdinand and Schwaigery, Stephan and Daeublerz, Juergen and Tischer, Ingo and Thonke, Klaus and Neugebauer, Silvio and Metzner, Sebastian and Bertram, Frank and Christen, Juergen and Lengner, Holger and Thalmair, Johannes and Zweck, Josef (2012) Semipolar GaInN quantum well structures on large area substrates. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 249 (3). pp. 464-467. ISSN 0370-1972,
Full text not available from this repository. (Request a copy)Abstract
In order to deposit semipolar GaN layers on foreign substrates while still starting the growth along the c-direction, we have etched trenches into r-plane and n-plane sapphire wafers. The GaN MOVPE growth then starts from c-plane-like sidewalls of these trenches, eventually leading to semipolar $\{ 11{\bar {2}}2\} $ and $\{ 10{\bar {1}}1\} $ surfaces with very good properties. GaInN quantum wells grown on such surfaces show very uniform properties on $\{ 10{\bar {1}}1\} $ surfaces, but still reflect the stripe geometry on $\{ 11{\bar {2}}2\} $ surfaces by a slightly larger In uptake at the stripe coalescence regions.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | STACKING-FAULTS; GROWTH; GAN; SAPPHIRE; NUCLEATION; NITRIDE; QUALITY; LAYER; GaInN quantum wells; MOVPE; semipolar GaN |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Josef Zweck |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 19 May 2020 05:29 |
| Last Modified: | 19 May 2020 05:29 |
| URI: | https://pred.uni-regensburg.de/id/eprint/19177 |
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