Plechinger, G. and Schrettenbrunner, F. -X. and Eroms, J. and Weiss, D. and Schueller, C. and Korn, T. (2012) Low-temperature photoluminescence of oxide-covered single-layer MoS2. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 6 (3). pp. 126-128. ISSN 1862-6254,
Full text not available from this repository. (Request a copy)Abstract
We present a photoluminescence study of single-layer MoS2 flakes on SiO2 surfaces. We demonstrate that the luminescence peak position of flakes prepared from natural MoS2, which varies by up to 25 meV between individual flakes, can be homogenized by annealing in vacuum. We use HfO2 and Al2O3 layers prepared by atomic layer deposition to cover some of our flakes. In these flakes, we observe a suppression of the low-energy luminescence peak which appears in asprepared flakes at low temperatures. We infer that this peak originates from excitons bound to surface adsorbates. We also observe different temperature-induced shifts of the luminescence peaks for the oxide-covered flakes. This effect stems from the different thermal expansion coefficients of the oxide layers and the MoS2 flakes. It indicates that the single-layer MoS2 flakes strongly adhere to the oxide layers and are therefore strained. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ; MoS2; two-dimensional crystals; photoluminescence |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 19 May 2020 05:36 |
| Last Modified: | 19 May 2020 05:36 |
| URI: | https://pred.uni-regensburg.de/id/eprint/19180 |
Actions (login required)
 |
View Item |
