Endres, B. and Ciorga, M. and Wagner, R. and Ringer, S. and Utz, M. and Bougeard, D. and Weiss, D. and Back, C. H. and Bayreuther, G. (2012) Nonuniform current and spin accumulation in a 1 mu m thick n-GaAs channel. APPLIED PHYSICS LETTERS, 100 (9): 092405. ISSN 0003-6951,
Full text not available from this repository. (Request a copy)Abstract
The spin accumulation in a n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin polarization is observed in a 1 mu m thick n-GaAs channel with the maximum polarization near the contact edge opposite to the maximum current density. The one-dimensional model of electron drift and spin diffusion, frequently used, cannot explain this observation. It also leads to incorrect spin lifetimes from Hanle curves with a strong bias and distance dependence. Numerical simulations based on a two-dimensional drift-diffusion model, however, reproduce the observed spin distribution quite well and lead to realistic spin lifetimes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691175]
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SEMICONDUCTOR; SPINTRONICS; TRANSPORT; DEVICES; current density; gallium arsenide; Hanle effect; III-V semiconductors; numerical analysis; spin dynamics; spin polarised transport |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Christian Back Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 19 May 2020 06:44 |
| Last Modified: | 19 May 2020 06:44 |
| URI: | https://pred.uni-regensburg.de/id/eprint/19215 |
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