Joenen, H. and Bremers, H. and Rossow, U. and Langer, T. and Kruse, A. and Hoffmann, L. and Thalmair, J. and Zweck, J. and Schwaiger, S. and Scholz, F. and Hangleiter, A. (2012) Analysis of indium incorporation in non-and semipolar GaInN QW structures: comparing x-ray diffraction and optical properties. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 27 (2): 024013. ISSN 0268-1242,
Full text not available from this repository. (Request a copy)Abstract
We have studied the growth of GaInN/GaN quantum wells on various polar, nonpolar and semipolar planes. From a detailed x-ray diffraction analysis, we derive the strain state and the composition of the quantum wells. The optical emission energy is obtained from photoluminescence spectra and modelled taking into account the deformation potentials and the Stark shifts. Both x-ray and optical data consistently show that indium incorporation is identical on the polar, nonpolar and semipolar planes within the experimental uncertainty.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | LIGHT-EMITTING-DIODES; QUANTUM-WELLS; PLANE GAN; SEMICONDUCTORS; FIELDS; POLARIZATION; LIFETIME; ALLOYS; LAYERS; INGAN; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Josef Zweck |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 20 May 2020 05:35 |
| Last Modified: | 20 May 2020 05:35 |
| URI: | https://pred.uni-regensburg.de/id/eprint/19302 |
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