Gareev, R. R. and Schmid, M. and Vancea, J. and Back, C. H. and Schreiber, R. and Buergler, D. and Schneider, C. M. and Stromberg, F. and Wende, H. (2012) Antiferromagnetic coupling across silicon regulated by tunneling currents. APPLIED PHYSICS LETTERS, 100 (2): 022406. ISSN 0003-6951,
Full text not available from this repository. (Request a copy)Abstract
We report on the enhancement of antiferromagnetic coupling in epitaxial Fe/Si/Fe structures by voltage-driven spin-polarized tunneling currents. Using the ballistic electron magnetic microscopy, we established that the hot-electron collector current reflects magnetization alignment and the magnetocurrent exceeds 200% at room temperature. The saturation magnetic field for the collector current corresponding to the parallel alignment of magnetizations rises up with the tunneling current, thus demonstrating stabilization of the antiparallel alignment and increasing antiferromagnetic coupling. We connect the enhancement of antiferromagnetic coupling with local dynamic spin torques mediated by spin-polarized tunneling electrons. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675872]
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | LAYERED MAGNETIC-STRUCTURES; INTERLAYER EXCHANGE; MAGNETORESISTANCE; JUNCTIONS; TORQUE; BARRIER; DRIVEN; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Christian Back |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 20 May 2020 13:13 |
| Last Modified: | 20 May 2020 13:13 |
| URI: | https://pred.uni-regensburg.de/id/eprint/19374 |
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