Jhang, S. H. and Craciun, M. F. and Schmidmeier, S. and Tokumitsu, S. and Russo, S. and Yamamoto, M. and Skourski, Y. and Wosnitza, J. and Tarucha, S. and Eroms, J. and Strunk, C. (2011) Stacking-order dependent transport properties of trilayer graphene. PHYSICAL REVIEW B, 84 (16): 161408. ISSN 1098-0121,
Full text not available from this repository. (Request a copy)Abstract
We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it causes the increase of a band overlap in the ABA trilayer. In a perpendicular magnetic field, the ABA trilayer develops quantum Hall plateaus at filling factors of v = 2,4,6, ... with a step of Delta v = 2, whereas the inversion-symmetric ABC trilayer exhibits plateaus at v = 6 and 10 with fourfold spin and valley degeneracy.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | BILAYER GRAPHENE; DIRAC FERMIONS; BERRYS PHASE; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Christoph Strunk |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 02 Jun 2020 04:55 |
| Last Modified: | 02 Jun 2020 04:55 |
| URI: | https://pred.uni-regensburg.de/id/eprint/19956 |
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