Korn, T. and Heydrich, S. and Hirmer, M. and Schmutzler, J. and Schueller, C. (2011) Low-temperature photocarrier dynamics in monolayer MoS2. APPLIED PHYSICS LETTERS, 99 (10): 102109. ISSN 0003-6951, 1077-3118
Full text not available from this repository. (Request a copy)Abstract
The band structure of MoS2 strongly depends on the number of layers, and a transition from indirect to direct-gap semiconductor has been observed recently for a single layer of MoS2. Single-layer MoS2 therefore becomes an efficient emitter of photoluminescence even at room temperature. Here, we report on scanning Raman and on temperature-dependent, as well as time-resolved photoluminescence measurements on single-layer MoS2 flakes prepared by exfoliation. We observe the emergence of two distinct photoluminescence peaks at low temperatures. The photocarrier recombination at low temperatures occurs on the few-picosecond timescale, but with increasing temperatures, a biexponential photoluminescence decay with a longer-lived component is observed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3636402]
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ; band structure; molybdenum compounds; monolayers; photoluminescence; Raman spectra; semiconductor materials |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group Christian Schüller |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 29 May 2020 13:40 |
| Last Modified: | 29 May 2020 13:40 |
| URI: | https://pred.uni-regensburg.de/id/eprint/20180 |
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