Spin-current generation from Coulomb-Rashba interaction in semiconductor bilayers

Glazov, M. M. and Semina, M. A. and Badalyan, S. M. and Vignale, G. (2011) Spin-current generation from Coulomb-Rashba interaction in semiconductor bilayers. PHYSICAL REVIEW B, 84 (3): 033305. ISSN 1098-0121,

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Abstract

Electrons in double-layer semiconductor heterostructures experience a special type of spin-orbit interaction that arises in each layer from the perpendicular component of the Coulomb electric field created by electron-density fluctuations in the other layer. We show that this interaction, acting in combination with the usual spin-orbit interaction, can generate a spin current in one layer when a charge current is driven in the other. This effect is distinct symmetrywise from the spin-Hall drag. The spin current is not, in general, perpendicular to the drive current.

Item Type: Article
Uncontrolled Keywords: 2-DIMENSIONAL ELECTRON-SYSTEMS; RELAXATION; SCATTERING; ORIENTATION;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Theroretical Physics
Depositing User: Dr. Gernot Deinzer
Date Deposited: 08 Jun 2020 04:58
Last Modified: 08 Jun 2020 04:58
URI: https://pred.uni-regensburg.de/id/eprint/20526

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