Mapping leakage currents in a nanostructure fabricated via local anodic oxidation

Huefner, M. and Schnez, S. and Kueng, B. and Ihn, T. and Reinwald, M. and Wegscheider, W. and Ensslin, K. (2011) Mapping leakage currents in a nanostructure fabricated via local anodic oxidation. NANOTECHNOLOGY, 22 (29): 295306. ISSN 0957-4484,

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Abstract

The functionality of nanostructures fabricated via local anodic oxidation is limited by undesired leakage currents. We use low-temperature scanning gate microscopy to pin down the spatial position where leakage currents are most likely to occur. We show that leakage currents do not flow homogeneously along the complete barrier but at distinct weak points such as crossings of two oxide lines. These findings can be used to improve the design of such nanostructures.

Item Type: Article
Uncontrolled Keywords: SCANNING FORCE MICROSCOPE; TIP-INDUCED ANODIZATION; SURFACES; DEVICES;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics
Depositing User: Dr. Gernot Deinzer
Date Deposited: 05 Jun 2020 07:18
Last Modified: 05 Jun 2020 07:18
URI: https://pred.uni-regensburg.de/id/eprint/20533

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