Joenen, H. and Rossow, U. and Bremers, H. and Hoffmann, L. and Brendel, M. and Draeger, A. D. and Schwaiger, S. and Scholz, F. and Thalmair, J. and Zweck, J. and Hangleiter, A. (2011) Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells. APPLIED PHYSICS LETTERS, 99 (1): 011901. ISSN 0003-6951,
Full text not available from this repository. (Request a copy)Abstract
We report on the optical properties of m-plane GaInN/GaN quantum wells (QWs). We found that the emission energy of GaInN QWs grown on m-plane SiC is significantly lower than on nonpolar bulk GaN, which we attribute to the high density of stacking faults. Temperature and power dependent photoluminescence reveals that the GaInN QWs on SiC have almost as large internal quantum efficiencies as on bulk GaN despite the much higher defect density. Our results indicate that quantum-wire-like features formed by stacking faults intersecting the quantum wells provide a highly efficient light emission completely dominating the optical properties of the structures. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3607301]
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | DEFORMATION POTENTIALS; GALLIUM NITRIDE; PLANE GAN; INN; SEMICONDUCTORS; LUMINESCENCE; LIFETIME; FIELDS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Josef Zweck |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 05 Jun 2020 08:53 |
| Last Modified: | 05 Jun 2020 08:53 |
| URI: | https://pred.uni-regensburg.de/id/eprint/20556 |
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