Huebner, J. and Kunz, S. and Oertel, S. and Schuh, D. and Pochwala, M. and Duc, H. T. and Foerstner, J. and Meier, T. and Oestreich, M. (2011) Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells. PHYSICAL REVIEW B, 84 (4): 041301. ISSN 1098-0121,
Full text not available from this repository. (Request a copy)Abstract
We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs single quantum wells, even a symmetric spatial envelope wave function gives rise to an asymmetric in-plane electron Lande g-factor. The anisotropy is neither a direct consequence of the asymmetric in-plane Dresselhaus splitting nor a direct consequence of the asymmetric Zeeman splitting of the hole bands, but rather it is a pure higher-order effect that exists as well for diamond-type lattices. The measurements for various well widths are very well described within 14 x 14 band k.p theory and illustrate that the electron spin is an excellent meter variable for mapping out the internal-otherwise hidden-symmetries in two-dimensional systems. Fourth-order perturbation theory yields an analytical expression for the strength of the g-factor anisotropy, providing a qualitative understanding of the observed effects.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SPIN RELAXATION; SEMICONDUCTORS; SPINTRONICS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 09 Jun 2020 05:52 |
| Last Modified: | 09 Jun 2020 05:52 |
| URI: | https://pred.uni-regensburg.de/id/eprint/20624 |
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