Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

Ciorga, M. and Wolf, C. and Einwanger, A. and Utz, M. and Schuh, D. and Weiss, D. (2011) Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices. AIP ADVANCES, 1 (2): 022113. ISSN 2158-3226,

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Abstract

We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p(+)-(Ga,Mn)As/n(+)-GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of the interplay between spin-transport-related contribution and the tunneling anisotropic magnetoresistance of the magnetic contacts. The magnitude of the spin-related magnetoresistance change is equal to 30 Omega which is twice the magnitude of the measured non-local signal. Copyright 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [doi:10.1063/1.3591397]

Item Type: Article
Uncontrolled Keywords: ROOM-TEMPERATURE; INJECTION; SEMICONDUCTOR; POLARIZATION; TRANSPORT; METAL;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Depositing User: Dr. Gernot Deinzer
Date Deposited: 09 Jun 2020 08:24
Last Modified: 09 Jun 2020 08:24
URI: https://pred.uni-regensburg.de/id/eprint/20677

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