Weymouth, A. J. and Wutscher, T. and Welker, J. and Hofmann, T. and Giessibl, F. J. (2011) Phantom Force Induced by Tunneling Current: A Characterization on Si(111). PHYSICAL REVIEW LETTERS, 106 (22): 226801. ISSN 0031-9007,
Full text not available from this repository.Abstract
Simultaneous measurements of tunneling current and atomic forces provide complementary atomic-scale data of the electronic and structural properties of surfaces and adsorbates. With these data, we characterize a strong impact of the tunneling current on the measured force on samples with limited conductivity. The effect is a lowering of the effective gap voltage through sample resistance which in turn lowers the electrostatic attraction, resulting in an apparently repulsive force. This effect is expected to occur on other low-conductance samples, such as adsorbed molecules, and to strongly affect Kelvin probe measurements when tunneling occurs.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SILICON (111)-(7X7) SURFACE; 7 X 7; CONTRAST INVERSION; ATOMIC-RESOLUTION; REAL SPACE; MICROSCOPY; TIP; VACUUM; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Giessibl > Group Franz J. Giessibl |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 15 Jun 2020 06:16 |
| Last Modified: | 15 Jun 2020 06:16 |
| URI: | https://pred.uni-regensburg.de/id/eprint/20730 |
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