Danhof, J. and Vierheilig, C. and Schwarz, U. T. and Meyer, T. and Peter, M. and Hahn, B. (2011) Temperature-dependent photoluminescence measurements on a sub-micrometer length scale on green light emitting InGaN/GaN quantum wells. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 248 (5). pp. 1270-1274. ISSN 0370-1972, 1521-3951
Full text not available from this repository. (Request a copy)Abstract
For an InGaN/GaN multiquantum well sample with low threading dislocation density (TDD), temperature-dependent microphotoluminescence measurements were performed. Evaluation of the behavior of the photoluminescence peak energy leads to the conclusion that even at a length scale of about 500 nm we still see the same S-shape of the temperature-dependent energy shift that was observed on a far larger scale. The behavior of the temperature-dependent full width at half maximum of the spectra and the integrated intensity leads to similar conclusions. We therefore demonstrate that the phenomenon responsible for the S-shape acts on a length scale that is far smaller than 500 nm. In addition, the behavior of the integrated intensity shows a fluctuation of local point defect density in the analyzed sample with its low TDD. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | EMISSION; SEMICONDUCTORS; SHIFT; InGaN; quantum wells; photoluminescence |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Theroretical Physics > Chair Professor Grifoni > Group Milena Grifoni |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 22 Jun 2020 04:58 |
| Last Modified: | 22 Jun 2020 04:59 |
| URI: | https://pred.uni-regensburg.de/id/eprint/20889 |
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