Lechner, V. and Golub, L. E. and Lomakina, F. and Bel'kov, V. V. and Olbrich, P. and Stachel, S. and Caspers, I. and Griesbeck, M. and Kugler, M. and Hirmer, M. J. and Korn, T. and Schueller, C. and Schuh, D. and Wegscheider, W. and Ganichev, S. D. (2011) Spin and orbital mechanisms of the magnetogyrotropic photogalvanic effects in GaAs/AlxGa1-xAs quantum well structures. PHYSICAL REVIEW B, 83 (15): 155313. ISSN 1098-0121,
Full text not available from this repository.Abstract
We report on the study of the linear and circular magnetogyrotropic photogalvanic effect (MPGE) in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Lande factor g* depends on the quantum well (QW) width and has different signs for narrow and wide QWs, we succeeded to separate spin and orbital contributions to both MPGEs. Our experiments show that, for most QW widths, the MPGEs are mainly driven by spin-related mechanisms, which results in a photocurrent proportional to the g* factor. In structures with a vanishingly small g* factor, however, linear and circular MPGE are also detected, proving the existence of orbital mechanisms.
Item Type: | Article |
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Uncontrolled Keywords: | SEMICONDUCTORS; ELECTRONS; GAAS; |
Subjects: | 500 Science > 530 Physics |
Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group Christian Schüller |
Depositing User: | Dr. Gernot Deinzer |
Date Deposited: | 22 Jun 2020 06:49 |
Last Modified: | 22 Jun 2020 06:49 |
URI: | https://pred.uni-regensburg.de/id/eprint/20936 |
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