Endres, B. and Hoffmann, F. and Wolf, C. and Einwanger, A. and Utz, M. and Schuh, D. and Woltersdorf, G. and Ciorga, M. and Weiss, D. and Back, C. H. and Bayreuther, G. (2011) Bias dependence of spin injection into GaAs from Fe, FeCo, and (Ga,Mn) As contacts. JOURNAL OF APPLIED PHYSICS, 109 (7): 07C505. ISSN 0021-8979,
Full text not available from this repository. (Request a copy)Abstract
Spin injection from Fe(001) and (Ga,Mn) As(001) into n-GaAs(001) was investigated using a method which provides two-dimensional cross-sectional images of the spin polarization in GaAs. While the distribution of the spin polarization below the injecting contact is nearly uniform for (Ga,Mn) As, a strong confinement near the contact edge is observed for Fe and FeCo. The spin polarization in GaAs changes sign when the injected current is reversed. Multiple sign reversals as a function of bias voltage as reported previously for Fe injectors are not observed with (Ga,Mn) As and Fe contacts grown on clean n(++)-GaAs in agreement with earlier results for an epitaxial FeCo injector. (C) 2011 American Institute of Physics. [doi:10.1063/1.3553932]
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SEMICONDUCTOR; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Christian Back Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 22 Jun 2020 13:00 |
| Last Modified: | 22 Jun 2020 13:00 |
| URI: | https://pred.uni-regensburg.de/id/eprint/20972 |
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