Microwave reflection measurement of critical currents in a nanotube Josephson transistor with a resistive environment

Lechner, Lorenz and Gaass, Markus and Paila, Antti and Sillanpaa, Mika A. and Strunk, Christoph and Hakonen, Pertti J. (2011) Microwave reflection measurement of critical currents in a nanotube Josephson transistor with a resistive environment. NANOTECHNOLOGY, 22 (12): 125203. ISSN 0957-4484,

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Abstract

A scheme for measuring small intrinsic critical currents I(c) in nanoscale devices is described. Changes in Josephson inductance L(J) are converted to frequency variations that are recorded via microwave reflection measurements at 700-800 MHz. The critical current is determined from the frequency shift of the reflection magnitude at zero phase bias assuming a sinusoidal current-phase relation. The method is used to study a multiwalled carbon nanotube transistor with Pd/Nb contacts inside a resistive on-chip environment. We observe gate-tunable critical currents up to I(c) similar to 8 nA corresponding to L(J) > 40 nH. The method presented is also applicable to devices shunted by closed superconducting loops.

Item Type: Article
Uncontrolled Keywords: CARBON NANOTUBES;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Christoph Strunk
Depositing User: Dr. Gernot Deinzer
Date Deposited: 24 Jun 2020 05:04
Last Modified: 24 Jun 2020 05:04
URI: https://pred.uni-regensburg.de/id/eprint/21103

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