Ketterer, Bernt and Heiss, Martin and Livrozet, Marie J. and Rudolph, Andreas and Reiger, Elisabeth and Fontcuberta i Morral, Anna (2011) Determination of the band gap and the split-off band in wurtzite GaAs using Raman and photoluminescence excitation spectroscopy. PHYSICAL REVIEW B, 83 (12): 125307. ISSN 1098-0121,
Full text not available from this repository. (Request a copy)Abstract
GaAs nanowires with 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a molecular beam epitaxy system, using gold as a catalyst. We use resonant Raman spectroscopy and photoluminescence to determine the position of the crystal-field split-off band of hexagonal wurtzite GaAs. The temperature dependence of this transition enables us to extract the value at 0 K, which is 1.982 eV. Our photoluminescence excitation spectroscopy measurements are consistent with a band gap of wurtzite GaAs below 1.523 eV.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | III-V NANOWIRES; TEMPERATURE-DEPENDENCE; HETEROSTRUCTURES; SCATTERING; SEMICONDUCTORS; SUPERLATTICES; INP; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 24 Jun 2020 05:09 |
| Last Modified: | 24 Jun 2020 05:09 |
| URI: | https://pred.uni-regensburg.de/id/eprint/21106 |
Actions (login required)
 |
View Item |
