Wunderer, Thomas and Feneberg, M. and Lipski, F. and Wang, J. and Leute, R. A. R. and Schwaiger, S. and Thonke, K. and Chuvilin, A. and Kaiser, U. and Metzner, S. and Bertram, F. and Christen, J. and Beirne, G. J. and Jetter, M. and Michler, P. and Schade, L. and Vierheilig, C. and Schwarz, U. T. and Draeger, A. D. and Hangleiter, A. and Scholz, F. (2011) Three-dimensional GaN for semipolar light emitters. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 248 (3). pp. 549-560. ISSN 0370-1972,
Full text not available from this repository. (Request a copy)Abstract
Selective-area epitaxy is used to form three-dimensional (3D) GaN structures providing semipolar crystal facets. On full 2-in. sapphire wafers we demonstrate the realization of excellent semipolar material quality by introducing inverse GaN pyramids. When depositing InGaN quantum wells on such a surface, the specific geometry influences thickness and composition of the films and can be nicely modeled by gas phase diffusion processes. Various investigation methods are used to confirm the drastically reduced piezoelectric polarization on the semipolar planes. Complete electrically driven light-emitting diode test structures emitting in the blue and blue/green spectral regions show reasonable output powers in the milliwatt regime. Finally, first results of the integration of the 3D structures into a conventional laser design are presented. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | CHEMICAL-VAPOR-DEPOSITION; A-PLANE GAN; EPITAXIAL LATERAL OVERGROWTH; SELECTIVE-AREA GROWTH; BULK INGAN FILMS; QUANTUM-WELLS; EMITTING-DIODES; PIEZOELECTRIC FIELDS; SIDE FACETS; NONPOLAR; InGaN; light-emitting devices; quantum wells; III-V semiconductors |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 24 Jun 2020 14:34 |
| Last Modified: | 24 Jun 2020 14:34 |
| URI: | https://pred.uni-regensburg.de/id/eprint/21192 |
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