Joenen, Holger and Rossow, Uwe and Bremers, Heiko and Hoffmann, Lars and Brendel, Moritz and Draeger, Alexander Daniel and Metzner, Sebastian and Bertram, Frank and Christen, Juergen and Schwaiger, Stephan and Scholz, Ferdinand and Thalmair, Johannes and Zweck, Josef and Hangleiter, Andreas (2011) Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 248 (3). pp. 600-604. ISSN 0370-1972,
Full text not available from this repository. (Request a copy)Abstract
GaInN/GaN multiple quantum well structures grown on polar and nonpolar surfaces have been compared with respect to the indium incorporation efficiency in the quantum wells (QWs). Under the same growth conditions X-ray diffraction measurements reveal similar growth rates and In concentrations for c-plane, a-plane, and m-plane with In contents up to 40%. These results are in good agreement with optical experiments, in particular for homoepitaxial growth. However, there is strong evidence that the optical properties of the nonpolar heteroepitaxial GaInN QWs are dominated by the high density of stacking faults in those samples. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | LIGHT-EMITTING-DIODES; M-PLANE; SUBSTRATE MISCUT; STACKING-FAULTS; GAN; FIELDS; IMPACT; GaInN; metal-organic vapor phase epitaxy; photoluminescence; quantum wells; X-ray diffraction |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Josef Zweck |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 24 Jun 2020 14:37 |
| Last Modified: | 24 Jun 2020 14:37 |
| URI: | https://pred.uni-regensburg.de/id/eprint/21194 |
Actions (login required)
 |
View Item |
