Bremers, H. and Schwiegel, A. and Hoffmann, L. and Joenen, H. and Rossow, U. and Thalmair, J. and Zweck, J. and Hangleiter, A. (2011) X-ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 248 (3). pp. 616-621. ISSN 0370-1972,
Full text not available from this repository. (Request a copy)Abstract
Determination of compositions in multiple quantum well structures is a critical issue. Until now only few experimental description of determination of concentrations in the nonpolar m-or a-direction in III-nitrides by means of X-ray diffraction has been published. Using the example of GaInN/GaN multiple quantum well structures we present different methods to determine the indium concentration. After presenting the relevant elasticity relations we adopt a step model introduced by Segmuller and Blakeslee to nonpolar directions. This model allows a simulation of symmetrical 2 theta-omega scans. We will discuss the possibilities and also the limitations of this model. Additionally, we present a method to determine concentrations by using the peak position of the zero order superlattice peak. Finally, we compare the methods using samples grown on m-plane SiC and bulk m-plane GaN. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | NITRIDE; DIFFRACTION; CRYSTALS; FIELDS; indium content; nitrides; nonpolar; quantum wells; X-ray diffraction |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Josef Zweck |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 24 Jun 2020 14:39 |
| Last Modified: | 24 Jun 2020 14:39 |
| URI: | https://pred.uni-regensburg.de/id/eprint/21195 |
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