Hirmer, M. and Schuh, D. and Wegscheider, W. (2011) Carbon doped InAlAs/InGaAs/InAs heterostructures: Tuning from n- to p-doping. APPLIED PHYSICS LETTERS, 98 (8): 082103. ISSN 0003-6951,
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We fabricated carbon doped InAs/In(x)Ga(1-x)As/In(x)Al(1-x)As heterostructures, which show p-type and n-type conductivity for different In contents. Two-dimensional hole gas in a structure with x = 0.75 has been prepared in the ternary compound, despite the fact that carbon as an n-type dopant in InAs exhibits electron conductivity in In(x)Ga(1-x)As and In(x)Al(1-x)As compounds with high indium content. A special doping design has been employed to obtain hole conductivity. As a result, the conductivity can be tuned from n-type to p-type with the In content and with different doping profiles in these structures. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3557026]
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | INAS QUANTUM-WELLS; TRANSPORT-PROPERTIES; BARRIER LAYERS; GAAS; EPITAXY; ALLOYS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Rupert Huber |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 25 Jun 2020 09:53 |
| Last Modified: | 25 Jun 2020 09:53 |
| URI: | https://pred.uni-regensburg.de/id/eprint/21258 |
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