Shiogai, J. and Schuh, D. and Wegscheider, W. and Kohda, M. and Nitta, J. and Weiss, D. (2011) Magnitude and sign control of lithography-induced uniaxial anisotropy in ultra-thin (Ga,Mn)As wires. APPLIED PHYSICS LETTERS, 98 (8): 083101. ISSN 0003-6951, 1077-3118
Full text not available from this repository. (Request a copy)Abstract
We were able to control the magnitude and sign of the uniaxial anisotropy in 5-nm-thin (Ga,Mn)As wires by changing the crystallographic direction of the lithography-induced strain relaxation. The 1-mu m-wide (Ga,Mn)As wires, oriented in [110] and [1 (1) over bar0] directions, were fabricated using electron beam lithography. Their magnetic anisotropies were studied by a coherent rotation method at temperatures between 4.5 and 75 K. Depending on the orientation of the wire, the additional uniaxial anisotropy observed along the axis of the 1-mu m-wide samples either increased or decreased the total uniaxial anisotropy. (C) 2011 American Institute of Physics. [doi:10.1063/1.3556556]
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | MAGNETIC-ANISOTROPY; MAGNETOTRANSPORT; SEMICONDUCTORS; FILMS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Rupert Huber Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 25 Jun 2020 09:55 |
| Last Modified: | 25 Jun 2020 09:55 |
| URI: | https://pred.uni-regensburg.de/id/eprint/21259 |
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