Sailer, J. and Wild, A. and Lang, V. and Siddiki, A. and Bougeard, D. (2010) Quantum Hall resistance overshoot in two-dimensional (2D) electron gases: theory and experiment. NEW JOURNAL OF PHYSICS, 12: 113033. ISSN 1367-2630,
Full text not available from this repository. (Request a copy)Abstract
We present a systematic experimental investigation of an unusual transport phenomenon observed in two-dimensional (2D) electron gases in Si/SiGe heterostructures under integer quantum Hall effect (IQHE) conditions. This phenomenon emerges under specific experimental conditions and in different material systems. It is commonly referred to as a Hall resistance overshoot but it lacks a consistent explanation so far. Based on our experimental findings, we have developed a model that accounts for all of our observations in the framework of a screening theory for the IQHE. Within this model, the origin of the overshoot is attributed to a transport regime where current is confined to co-existing evanescent incompressible strips of different filling factors.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | HIGH MAGNETIC-FIELDS; DISLOCATION-DENSITY; EDGE CHANNELS; BUFFER LAYER; REGIME; SI; SPIN; HETEROSTRUCTURES; CONDUCTANCE; MODULATION; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 06 Jul 2020 11:02 |
| Last Modified: | 06 Jul 2020 11:02 |
| URI: | https://pred.uni-regensburg.de/id/eprint/23874 |
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