Wild, A. and Sailer, J. and Nuetzel, J. and Abstreiter, G. and Ludwig, S. and Bougeard, D. (2010) Electrostatically defined quantum dots in a Si/SiGe heterostructure. NEW JOURNAL OF PHYSICS, 12: 113019. ISSN 1367-2630,
Full text not available from this repository. (Request a copy)Abstract
We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxially grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstrated. We discuss technological challenges specific to silicon-based heterostructures and the effect of a comparably large effective electron mass on transport properties and tunability of the double QD. Charge noise, which might be intrinsically induced due to strain engineering, is proven not to affect the stable operation of our device as a spin qubit.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SI/SI0.7GE0.3 HETEROSTRUCTURE; POINT-CONTACT; TRANSPORT; SPIN; SILICON; NANOSTRUCTURES; POLARIZATION; RELAXATION; SI; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 06 Jul 2020 12:27 |
| Last Modified: | 06 Jul 2020 12:27 |
| URI: | https://pred.uni-regensburg.de/id/eprint/23883 |
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