Bauer, Benedikt and Rudolph, Andreas and Soda, Marcello and Fontcuberta i Morral, Anna and Zweck, Josef and Schuh, Dieter and Reiger, Elisabeth (2010) Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy. NANOTECHNOLOGY, 21 (43): 435601. ISSN 0957-4484,
Full text not available from this repository. (Request a copy)Abstract
GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO(2) layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm and 2 mu m. Gallium droplets form preferentially at the etched holes acting as catalyst for the nanowire growth. The nanowires have hexagonal cross-sections with {110} side facets and crystallize predominantly in zincblende. The interdistance dependence of the nanowire growth rate indicates a change of the III/V ratio towards As-rich conditions for large hole distances inhibiting NW growth.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | LIQUID-SOLID GROWTH; PATTERNED GROWTH; ARRAYS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Josef Zweck Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Rupert Huber |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 08 Jul 2020 06:08 |
| Last Modified: | 08 Jul 2020 06:08 |
| URI: | https://pred.uni-regensburg.de/id/eprint/23994 |
Actions (login required)
 |
View Item |
