Karch, J. and Tarasenko, S. A. and Olbrich, P. and Schoenberger, T. and Reitmaier, C. and Plohmann, D. and Kvon, Z. D. and Ganichev, Sergey D. (2010) Orbital photogalvanic effects in quantum-confined structures. JOURNAL OF PHYSICS-CONDENSED MATTER, 22 (35): 355307. ISSN 0953-8984,
Full text not available from this repository. (Request a copy)Abstract
We report on the circular and linear photogalvanic effects caused by free-carrier absorption of terahertz radiation in electron channels on (001)-oriented and miscut silicon surfaces. The photocurrent behaviour upon variation of the radiation polarization state, wavelength, gate voltage, and temperature is studied. We present the microscopic and phenomenological theory of the photogalvanic effects, which describes well the experimental results. In particular, it is demonstrated that the circular (photon-helicity sensitive) photocurrent in silicon-based structures is of pure orbital nature originating from the quantum interference of different pathways contributing to the absorption of monochromatic radiation.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SPACE-CHARGE LAYERS; SEMICONDUCTOR; SURFACE; WELLS; SPIN; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 13 Jul 2020 08:48 |
| Last Modified: | 13 Jul 2020 08:48 |
| URI: | https://pred.uni-regensburg.de/id/eprint/24185 |
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