Korn, T. (2010) Time-resolved studies of electron and hole spin dynamics in modulation-doped GaAs/AlGaAs quantum wells. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 494 (5). pp. 415-445. ISSN 0370-1573, 1873-6270
Full text not available from this repository. (Request a copy)Abstract
Spin dynamics in semiconductors have gained much interest in the past years due to the emerging field of semiconductor spintronics. This review is focussed on the observation and control of electron and hole spin dynamics in modulation-doped heterostructures based on the CaAs/AlCaAs material system. Modulation doping allows for the creation of two-dimensional electron and hole systems with high carrier mobility. By confining carriers to a two-dimensional sheet, the spin-orbit interaction is modified significantly. In addition to this, it can be further modified by changing the symmetry of the system, for example by externally applied or built-in electric fields along the growth direction. Our recent experimental results on spin dynamics in two dimensions are reviewed and discussed in connection with theoretical considerations. A brief overview of the current research challenges in this field is given. (C) 2010 Elsevier B.V. All rights reserved.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | RAMAN-SCATTERING; SEMICONDUCTOR; RELAXATION; GAAS; ORIENTATION; TRANSPORT; INJECTION; POLARIZATION; ANISOTROPY; MECHANISM; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Petra Gürster |
| Date Deposited: | 17 Apr 2020 08:05 |
| Last Modified: | 17 Apr 2020 08:05 |
| URI: | https://pred.uni-regensburg.de/id/eprint/24291 |
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