Wittmann, B. and Danilov, S. N. and Bel'kov, V. V. and Tarasenko, S. A. and Novik, E. G. and Buhmann, H. and Bruene, C. and Molenkamp, L. W. and Kvon, Z. D. and Mikhailov, N. N. and Dvoretsky, S. A. and Vinh, N. Q. and van der Meer, A. F. G. and Murdin, B. and Ganichev, Sergey D. (2010) Circular photogalvanic effect in HgTe/CdHgTe quantum well structures. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 25 (9): 095005. ISSN 0268-1242,
Full text not available from this repository. (Request a copy)Abstract
We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the quantun well structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed in terms of a microscopic model.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SPIN; MICROSTRUCTURES; SEMICONDUCTOR; PULSES; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 15 Jul 2020 08:44 |
| Last Modified: | 15 Jul 2020 08:44 |
| URI: | https://pred.uni-regensburg.de/id/eprint/24300 |
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