Heydrich, S. and Hirmer, M. and Preis, C. and Korn, T. and Eroms, J. and Weiss, D. and Schueller, Christian (2010) Scanning Raman spectroscopy of graphene antidot lattices: Evidence for systematic p-type doping. APPLIED PHYSICS LETTERS, 97 (4): 043113. ISSN 0003-6951,
Full text not available from this repository. (Request a copy)Abstract
We have investigated antidot lattices, which were prepared on exfoliated graphene single layers via electron-beam lithography and ion etching, by means of scanning Raman spectroscopy. The peak positions, peak widths, and intensities of the characteristic phonon modes of the carbon lattice have been studied systematically in a series of samples. In the patterned samples, we found a systematic stiffening of the G band phonon mode, accompanied by a line narrowing, while the 2D two-phonon mode energies are found to be linearly correlated with the G mode energies. We interpret this as evidence for p-type doping of the nanostructured graphene. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3474613]
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ; doping; electron beam lithography; graphene; phonons; Raman spectra; sputter etching |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group Christian Schüller Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 22 Jul 2020 06:37 |
| Last Modified: | 22 Jul 2020 06:37 |
| URI: | https://pred.uni-regensburg.de/id/eprint/24450 |
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