Transverse thermoelectric devices

Reitmaier, C. and Walther, F. and Lengfellner, H. (2010) Transverse thermoelectric devices. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 99 (4). pp. 717-722. ISSN 0947-8396, 1432-0630

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Abstract

Multilayer structures A-B-Aa <...a <...a <... consisting of alternating layers of a metal A and a semiconductor B can show large anisotropy in their transport properties. In tilted multilayer structures, where layer planes and sample surface include a nonzero tilt angle, nonvanishing off-diagonal elements in the sample's transport tensors lead to transverse Seebeck and Peltier effects. Achievable temperature differences and figures of merit for transverse Peltier cooling are discussed and compared with experiments, coefficients of performance for transverse power generation are calculated.

Item Type: Article
Uncontrolled Keywords: YBA2CU3O7-DELTA FILMS; VOLTAGES;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Hans Lengfellner
Depositing User: Dr. Gernot Deinzer
Date Deposited: 28 Jul 2020 08:28
Last Modified: 28 Jul 2020 08:28
URI: https://pred.uni-regensburg.de/id/eprint/24578

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