Roessler, C. and Feil, T. and Mensch, P. and Ihn, T. and Ensslin, K. and Schuh, D. and Wegscheider, W. (2010) Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures. NEW JOURNAL OF PHYSICS, 12: 043007. ISSN 1367-2630,
Full text not available from this repository. (Request a copy)Abstract
In this work, we investigate high-mobility two-dimensional electron gases in Al(x)Ga(1-x)As heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we found that two different sample configurations can be set in situ with mobilities differing by a factor of more than two in a wide range of densities. This observation is discussed in the context of charge redistributions between the doping layers and is relevant for the design of future gateable high-mobility electron gases.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | QUANTUM-WELLS; SCATTERING; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Rupert Huber |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 04 Aug 2020 12:13 |
| Last Modified: | 04 Aug 2020 12:13 |
| URI: | https://pred.uni-regensburg.de/id/eprint/24942 |
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