Gareev, R. R. and Petukhov, A. and Schlapps, M. and Sadowski, J. and Wegscheider, W. (2010) Giant anisotropic magnetoresistance in insulating ultrathin (Ga,Mn)As. APPLIED PHYSICS LETTERS, 96 (5): 052114. ISSN 0003-6951,
Full text not available from this repository. (Request a copy)Abstract
Molecular-beam epitaxy grown, 5 nm thick annealed Ga(0.95)Mn(0.05)As films demonstrate transition from metallic to insulating state for sheet resistances near resistance quantum, which we connect with the two-dimensional hole localization. Below the metal-insulator transition we found the giant anisotropic magnetoresistance (GAMR) effect, which depends on the orientation of magnetization to crystallographic axes and demonstrates the twofold symmetry angular dependence. The GAMR manifests itself in positive magnetoresistance near 50% at T=1.7 K for H//[110] crystallographic direction in contrast to smaller negative magnetoresistance for H//[110] direction. We connect the GAMR with formation of high- and low-resistance states with different localization due to anisotropic spin-orbit interaction.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | FERROMAGNETISM; TEMPERATURE; TRANSPORT; FILMS; crystal orientation; electric resistance; gallium arsenide; giant magnetoresistance; magnetic anisotropy; magnetisation; manganese compounds; metal-insulator transition; molecular beam epitaxial growth; semimagnetic semiconductors; spin-orbit interactions |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 07 Aug 2020 09:11 |
| Last Modified: | 07 Aug 2020 09:11 |
| URI: | https://pred.uni-regensburg.de/id/eprint/25171 |
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