Kramer, Tobias and Kreisbeck, Christoph and Krueckl, Viktor and Heller, Eric J. and Parrott, Robert E. and Liang, Chi-Te (2010) Theory of the quantum Hall effect in finite graphene devices. PHYSICAL REVIEW B, 81 (8): 081410. ISSN 1098-0121,
Full text not available from this repository.Abstract
We study the quantum Hall effect (QHE) in graphene based on the current injection model, which takes into account the finite rectangular geometry with source and drain electrodes. In our model, the presence of disorder, the edge-state picture, extended states, and localized states, which are believed to be indispensable ingredients in describing the QHE, do not play an important role. Instead the boundary conditions during the injection into the graphene sheet, which are enforced by the presence of the Ohmic contacts, determine the current-voltage characteristics.
Item Type: | Article |
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Uncontrolled Keywords: | MAGNETIC-FIELDS; ELECTRON; |
Subjects: | 500 Science > 530 Physics |
Divisions: | Physics > Institute of Theroretical Physics > Alumni or Retired Professors > Group Tobias Kramer |
Depositing User: | Dr. Gernot Deinzer |
Date Deposited: | 10 Aug 2020 09:26 |
Last Modified: | 10 Aug 2020 09:26 |
URI: | https://pred.uni-regensburg.de/id/eprint/25264 |
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