Wurstbauer, U. and Knott, S. and Zolotaryov, A. and Schuh, D. and Hansen, W. and Wegscheider, W. (2010) Strong localization effect in magnetic two-dimensional hole systems. APPLIED PHYSICS LETTERS, 96 (2): 022103. ISSN 0003-6951, 1077-3118
Full text not available from this repository. (Request a copy)Abstract
We report an extensive study of the magnetotransport properties of magnetically doped two-dimensional hole systems. Inverted manganese modulation doped InAs quantum wells with localized manganese ions providing a magnetic moment of S=5/2 were grown by molecular beam epitaxy. Strong localization effect found in low-field magnetotransport measurements on these structures can either be modified by the manganese doping density or by tuning the two-dimensional hole density p via field effect. The data reveal that the ratio between p and manganese ions inside or in close vicinity to the channel enlarges the strong localization effect. Moreover, asymmetric broadening of the doping layer due to manganese segregation is significantly influenced by strain in the heterostructure.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | QUANTUM-WELLS; FERROMAGNETISM; TRANSPORT; LAYERS; galvanomagnetic effects; III-V semiconductors; indium compounds; magnetic moments; manganese; molecular beam epitaxial growth; semiconductor doping; semiconductor quantum wells |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 10 Aug 2020 09:07 |
| Last Modified: | 10 Aug 2020 09:07 |
| URI: | https://pred.uni-regensburg.de/id/eprint/25314 |
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