Cheng, J. L. and Wu, M. W. and Fabian, J. (2010) Theory of the Spin Relaxation of Conduction Electrons in Silicon. PHYSICAL REVIEW LETTERS, 104 (1): 016601. ISSN 0031-9007, 1079-7114
Full text not available from this repository. (Request a copy)Abstract
A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 K. The calculated spin relaxation times T-1 agree with the spin resonance and spin injection data, following a T-3 temperature dependence. The valley anisotropy of T-1 and the spin relaxation rates for hot electrons are predicted.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | LATTICE RELAXATION; BAND STRUCTURE; SPINTRONICS; DIAMOND; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 10 Aug 2020 09:11 |
| Last Modified: | 10 Aug 2020 09:11 |
| URI: | https://pred.uni-regensburg.de/id/eprint/25317 |
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